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- دیتاشیت STB13NM60N
دیتاشیت STB13NM60N
مشخصات دیتاشیت
| نام دیتاشیت | STB13NM60N |
|---|---|
| حجم فایل | 58.513 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 24 |
STB13NM60N |
دانلود دیتاشیت |
|---|
سایر مستندات
ST(B,D)13NM60N Datasheet 24 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STB13NM60N
- Power Dissipation (Pd): 90W
- Total Gate Charge (Qg@Vgs): 30nC@10V
- Input Capacitance (Ciss@Vds): 790pF@50V
- Continuous Drain Current (Id): 11A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 360mΩ@5.5A,10V
- Package: D2PAK
- Manufacturer: STMicroelectronics
- Series: MDmesh™ II
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number: STB13N
- detail: N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount D2PAK
